Following the successful delivery to the terminals of mobile brands, GalaxyCore’s self-developed second-generation 0.7μm 50MP CMOS image sensor, GC50E1, has been awarded the prestigious Potential Rising Star Award at the 2025 China Innovation IC Chip Power Award. This recognition was given for its groundbreaking pixel design and exceptional imaging performance, earning both market and industry recognition.
The 2025 China Innovation IC Chip Power Award is jointly selected by the China Integrated Circuit Innovation Alliance and the editorial board of China Integrated Circuit. It aims to identify leading-edge, competitive, and reliable Chinese IC products. A total of 102 companies and 141 chips competed in the evaluation, with the GC50E1 emerging as the winner, highlighting GalaxyCore’s technological leadership in the high-resolution CIS (CMOS Image Sensor) field.
The GC50E1 is built on the GalaxyCore GalaxyCell®2.0 process platform, specifically designed to significantly enhance imaging detail and reduce noise, especially in low-light shooting conditions. The GalaxyCell®2.0 platform integrates advanced FPPI®Plus isolation technology to effectively reduce pixel dark current, while the high-performance back-side deep trench isolation (BDTI) enhances the photodiode structure.
These two core pixel technologies increase the full well capacity (FWC) of the 0.7μm pixel by approximately 30%, improve quantum efficiency (QE) by about 20%, and maintain excellent white point (WP) levels, while significantly enhancing the signal-to-noise ratio (SNR) in low-light environments. As a result, the GC50E1 captures richer details and colors in both bright and low-light settings, presenting clearer and purer images, thus greatly enhancing the overall imaging experience for users.
The GC50E1 is compatible with high-performance front-facing, rear main and ultra-wide-angle cameras, and has been recognized by mobile brands for shipping.